Snyder, C.
and Mopsik, F.
(2001),
A Precision Capacitance Cell for Measurement of Thin Film Out-of-Plane Expansion Part III. Conducting and Semiconducting Materials, IEEE Transactions on Instrumentation and Measurement, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852836
(Accessed March 13, 2025)
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A Precision Capacitance Cell for Measurement of Thin Film Out-of-Plane Expansion Part III. Conducting and Semiconducting Materials
Published
Author(s)
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Abstract
This paper describes the construction, calibration, and use of a precision capacitance-based metrology for the measurement of the thermal and hygrothermal (swelling) expansion of thin films. It is demonstrated that with this version of our capacitance cell, materials ranging in electrical properties from insulator to conductors can be measured. The results of our measurements on p-type <100> oriented single crystal silicon are compared to the recommended standard reference values from the literature and are shown to be in excellent agreement.Citation
IEEE Transactions on Instrumentation and Measurement
Volume
50
Issue
No. 5
Pub Type
Journals
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Keywords
capacitance cell, coefficient of thermal expansion (CTE), guarded electrode, highsensitivity displacement, inner layer dielectrics, polymers, thermal expansion, thin films
Citation
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Created September 30, 2001, Updated October 12, 2021