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New Ion Source for High Precision FIB Nanomachining and Circuit Edit

Published

Author(s)

Adam V. Steele, Brenton Knuffman, Jabez J. McClelland

Abstract

We present a review of the Low Temperature Ion Source (LoTIS): its aims, design, performance data collected to date, and focused spot size projections when integrated with a FIB. LoTIS provides a Cs+ beam that has been measured to have high brightness (>〖10〗^7 Am^(-2) srad^(-1) eV^(-1)), and low-energy spread (<0.5 eV). These source characteristics enable a prediction of sub-nm d50 focused spot sizes. A FIB with the capabilities enabled by LoTIS would be well-suited to addressing FIB failure analysis tasks such as nanomachining, circuit edit, and site-specific SIMS.
Proceedings Title
Proceedings of the International Symposium for Testing and Failure Analysis
Conference Dates
November 9-13, 2014
Conference Location
Houston, TX, US
Conference Title
International Symposium for Testing and Failure Analysis

Keywords

Focused ion beam, FIB, SIMS, ion source, laser cooling, cold atom ion source, LOTIS

Citation

Steele, A. , Knuffman, B. and McClelland, J. (2014), New Ion Source for High Precision FIB Nanomachining and Circuit Edit, Proceedings of the International Symposium for Testing and Failure Analysis, Houston, TX, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=917117 (Accessed June 24, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created December 30, 2014, Updated October 12, 2021