Steele, A.
, Knuffman, B.
and McClelland, J.
(2014),
New Ion Source for High Precision FIB Nanomachining and Circuit Edit, Proceedings of the International Symposium for Testing and Failure Analysis, Houston, TX, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=917117
(Accessed May 20, 2025)
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New Ion Source for High Precision FIB Nanomachining and Circuit Edit
Published
Author(s)
Adam V. Steele, Brenton Knuffman,
Abstract
We present a review of the Low Temperature Ion Source (LoTIS): its aims, design, performance data collected to date, and focused spot size projections when integrated with a FIB. LoTIS provides a Cs+ beam that has been measured to have high brightness (>〖10〗^7 Am^(-2) srad^(-1) eV^(-1)), and low-energy spread (<0.5 eV). These source characteristics enable a prediction of sub-nm d50 focused spot sizes. A FIB with the capabilities enabled by LoTIS would be well-suited to addressing FIB failure analysis tasks such as nanomachining, circuit edit, and site-specific SIMS.Proceedings Title
Proceedings of the International Symposium for Testing and Failure Analysis
Conference Dates
November 9-13, 2014
Conference Location
Houston, TX, US
Conference Title
International Symposium for Testing and Failure Analysis
Pub Type
Conferences
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Keywords
Focused ion beam, FIB, SIMS, ion source, laser cooling, cold atom ion source, LOTIS
Citation
Issues
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Created December 30, 2014, Updated October 12, 2021