Steele, A.
, Knuffman, B.
and McClelland, J.
(2014),
New Ion Source for High Precision FIB Nanomachining and Circuit Edit, Proceedings of the International Symposium for Testing and Failure Analysis, Houston, TX, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=917117
(Accessed May 22, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
New Ion Source for High Precision FIB Nanomachining and Circuit Edit
Published
Author(s)
Adam V. Steele, Brenton Knuffman,
Abstract
We present a review of the Low Temperature Ion Source (LoTIS): its aims, design, performance data collected to date, and focused spot size projections when integrated with a FIB. LoTIS provides a Cs+ beam that has been measured to have high brightness (>〖10〗^7 Am^(-2) srad^(-1) eV^(-1)), and low-energy spread (<0.5 eV). These source characteristics enable a prediction of sub-nm d50 focused spot sizes. A FIB with the capabilities enabled by LoTIS would be well-suited to addressing FIB failure analysis tasks such as nanomachining, circuit edit, and site-specific SIMS.Proceedings Title
Proceedings of the International Symposium for Testing and Failure Analysis
Conference Dates
November 9-13, 2014
Conference Location
Houston, TX, US
Conference Title
International Symposium for Testing and Failure Analysis
Pub Type
Conferences
Download Paper
Keywords
Focused ion beam, FIB, SIMS, ion source, laser cooling, cold atom ion source, LOTIS
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created December 30, 2014, Updated October 12, 2021