New Ion Source for High Precision FIB Nanomachining and Circuit Edit
Adam V. Steele, Brenton Knuffman, Jabez J. McClelland
We present a review of the Low Temperature Ion Source (LoTIS): its aims, design, performance data collected to date, and focused spot size projections when integrated with a FIB. LoTIS provides a Cs+ beam that has been measured to have high brightness (>〖10〗^7 Am^(-2) srad^(-1) eV^(-1)), and low-energy spread (<0.5 eV). These source characteristics enable a prediction of sub-nm d50 focused spot sizes. A FIB with the capabilities enabled by LoTIS would be well-suited to addressing FIB failure analysis tasks such as nanomachining, circuit edit, and site-specific SIMS.
Proceedings of the International Symposium for Testing and Failure Analysis
November 9-13, 2014
Houston, TX, US
International Symposium for Testing and Failure Analysis
Focused ion beam, FIB, SIMS, ion source, laser cooling, cold atom ion source, LOTIS
, Knuffman, B.
and McClelland, J.
New Ion Source for High Precision FIB Nanomachining and Circuit Edit, Proceedings of the International Symposium for Testing and Failure Analysis, Houston, TX, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=917117
(Accessed May 28, 2023)