The use of a cluster (or polyatomic) primary ion projectile for organic SIMS has been demonstrated to increase the yield of characteristic molecular secondary ions, more efficiently desorb higher molecular weight species and reduce the accumulation of primary beam-induced damage. For depth profiling of semiconductors, a cluster beam may offer substantial improvements in depth resolution. We have recently begun to explore the use of a commercially available negative cesium sputter ion as a means of generating cluster ion beams on our Cameca IMS 4F and 6F magnetic sector SIMS instruments. The principal advantages of using a sputter ion source for cluster generation, as opposed to the SF5+ primary ion source, are the versatility in target selection and the ability to produce cluster ions from virtually any element in the periodic table. In this paper, we report on the use of the sputter ion source for generating carbon cluster primary ions and the application of these ion beams for organic surface characterization and depth profiling of shallow arsenic implants in silicon.
Citation: Journal of Vacuum Science and Technology A
Issue: No. 2
Pub Type: Journals
cluster beam, depth profiling, organic secondary ion mass spectrometry