This paper presents a summary and analysis of a study on optical modeling for critical dimension metrology. The paper is focused on two primary elements: 1) the comparison, stability, and validity of multiple electromagnetic scattering models and 2) a series of model-to-experiment comparisons. A part of the study will cover improved model-to-theory agreement obtained using our new Scatterfield microscopy technique, which has enabled evaluation of previous unquantified errors. The Scatterfield microscopy technique allows us to step or scan an aperture in a conjugate back focal plane of the objective lens enabling illumination of a narrow cone of incident plane waves at a given primary angle of incidence. A series of angle resolved images or intensity data can be obtained for each angle of illumination.
Proceedings Title: Proceedings of SPIE
Conference Dates: January 1, 2007
Conference Location: Munich, GE
Conference Title: Modeling Aspects in Optical Metrology
Pub Type: Conferences
background normalization, CCD camera, diffraction, higher order, optics, scatterfield, zero order