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Microwave-Based Metrology Platform Development: Application of Broad-Band RF Metrology to Integrated Circuit Reliability Analyses

Published

Author(s)

Lin You, Chukwudi A. Okoro, Jungjoon Ahn, Joseph Kopanski, Yaw S. Obeng

Abstract

In this paper we describe the development of a suite of techniques, based on the application of high frequency electromagnetic waves, to probe material and structural changes in integrated circuits under various external perturbations. We discuss how these techniques has been leveraged to study the impact of thermal cycling on the thermo-mechanical reliability of Cu TSV-based interconnects in 3D-ICs. In addition, we demonstrate, with preliminary data, how Scanning Microwave Spectroscopy can be used to detect buried artifacts and characterize metallic contacts.
Proceedings Title
ECS Trasnsaction: Moore-Than-More 2
Conference Dates
May 4-9, 2014
Conference Location
Orlando, FL, US
Conference Title
225th Electrochemical Soceity

Keywords

broadband, RF, emerging devices, nanoelectronics, 3D-IC, SMM

Citation

You, L. , Okoro, C. , Ahn, J. , Kopanski, J. and Obeng, Y. (2014), Microwave-Based Metrology Platform Development: Application of Broad-Band RF Metrology to Integrated Circuit Reliability Analyses, ECS Trasnsaction: Moore-Than-More 2, Orlando, FL, US (Accessed September 29, 2022)
Created May 11, 2014, Updated October 12, 2021