Snyder, C.
(2001),
High Sensitivity Technique for Measurement of Thin Film Out-of-Plane Expansion. II. Conducting and Semiconducting Samples, Proceedings of the 2000 International Conference on Characterization and Metrology for ULSI Technology, Gaithersburg, MD, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=851726
(Accessed May 3, 2025)
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High Sensitivity Technique for Measurement of Thin Film Out-of-Plane Expansion. II. Conducting and Semiconducting Samples
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Abstract
This paper describes the construction, calibration, and use of a precision capacitance-based metrology for the measurement of the thermal and hygrothermal (swelling) expansion of thin films. It is demonstrated that with this version of our capacitance cell, materials ranging in electronic properties from insulator to conductors can be measured. The results of measurements on p-type oriented single crystal silicon are compared to the recommended standard reference values from the literature and are shown to be in excellent agreement.Proceedings Title
Proceedings of the 2000 International Conference on Characterization and Metrology for ULSI Technology
Volume
550
Issue
No. 1
Conference Dates
June 26-29, 2000
Conference Location
Gaithersburg, MD
Conference Title
Characterization and Metrology for ULSI Technology Conference
Pub Type
Conferences
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Keywords
capacitance cell, guarded electrode, high sensitivity displacement, inner layer dielectrics, polymers, thermal expansion, thin films
Citation
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Created January 1, 2001, Updated February 19, 2017