High Sensitivity Technique for Measurement of Thin Film Out-of-Plane Expansion. II. Conducting and Semiconducting Samples

Published

January 1, 2001

Author(s)

Chad R. Snyder

Abstract

This paper describes the construction, calibration, and use of a precision capacitance-based metrology for the measurement of the thermal and hygrothermal (swelling) expansion of thin films. It is demonstrated that with this version of our capacitance cell, materials ranging in electronic properties from insulator to conductors can be measured. The results of measurements on p-type oriented single crystal silicon are compared to the recommended standard reference values from the literature and are shown to be in excellent agreement.

Proceedings Title

Proceedings of the 2000 International Conference on Characterization and Metrology for ULSI Technology

Volume

550

Issue

No. 1

Conference Dates

June 26-29, 2000

Conference Location

Gaithersburg, MD

Conference Title

Characterization and Metrology for ULSI Technology Conference

Pub Type

Conferences

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Keywords

capacitance cell, guarded electrode, high sensitivity displacement, inner layer dielectrics, polymers, thermal expansion, thin films

Citation

Snyder, C. (2001), High Sensitivity Technique for Measurement of Thin Film Out-of-Plane Expansion. II. Conducting and Semiconducting Samples, Proceedings of the 2000 International Conference on Characterization and Metrology for ULSI Technology, Gaithersburg, MD, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=851726 (Accessed May 14, 2025)