Fundamental Limits of Optical Critical Dimension Metrology: A Simulation Study

Published

January 1, 2007

Author(s)

Richard M. Silver, Thomas A. Germer, Ravikiran Attota, Bryan M. Barnes, B Bunday, J Allgair, Egon Marx, Jay S. Jun

Abstract

This paper is a comprehensive summary and analysis of a SEMATECH funded project to study the limits of optical critical dimension scatterometry.  The project was focused on two primary elements: 1) the comparison, stability, and validity of industry models and 2) a comprehensive analysis of process stacks to evaluate the ultimate sensitivity and limits of OCD.  Modeling methods are a requirement for the interpretation and quantitative analysis of scatterometry data.  The four models evaluated show good agreement over a range of targets and geometries for zero order specular reflection as well as higher order diffraction.  A number of process stacks and geometries representing semiconductor manufacturing nodes from the 45 nm node to the 18 nm node were simulated using several measurement modalities including angle-resolved scatterometry and spectrally-resolved scatterometry, measuring various combinations of intensity and polarization. It is apparent in the results that large differences are observed between those methods that rely upon unpolarized and single polarization measurements.

Proceedings Title

Proceedings of SPIE

Volume

6518

Conference Dates

February 1, 2007

Conference Location

San Jose, CA

Conference Title

Metrology, Inspection, and Process Control for Microlithography XXI

Pub Type

Conferences

Keywords

electromagnetic scattering, optical critical dimension scatterometry, optical modeling, sensitivity and limits, zero order specular reflection

Citation

Silver, R. , Germer, T. , Attota, R. , Barnes, B. , Bunday, B. , Allgair, J. , Marx, E. and Jun, J. (2007), Fundamental Limits of Optical Critical Dimension Metrology: A Simulation Study, Proceedings of SPIE, San Jose, CA (Accessed April 20, 2024)