Electron heating in rf-biased, inductively coupled plasmas

Published

July 15, 2008

Author(s)

Mark A. Sobolewski, J. -. Kim

Abstract

The effect of radio-frequency (rf) bias on electron density in an inductively coupled plasma reactor was measured using a wave cutoff probe, in Ar, CF4, and Ar/CF4 mixtures. At low source powers, we observed an increase in plasma electron density caused by an increase in ionization due to absorption of bias power by electrons via stochastic heating. The increase in electron density was proportional to the bias frequency and the square-root of the bias voltage. To explain these observations, the effect of bias-induced electron heating cannot be considered by itself; rather, its effect on the efficiency of the inductive source must also be considered.

Proceedings Title

19th Europhysics Conference on the Atomic and Molecular Physics of Ionized Gases

Conference Dates

July 15-19, 2008

Conference Location

Granada, ES

Pub Type

Conferences

Keywords

electrical discharge, electron density, electron heating, inductively coupled, ionization, plasma, radio-frequency bias, wave cutoff probe

Citation

Sobolewski, M. and Kim, J. (2008), Electron heating in rf-biased, inductively coupled plasmas, 19th Europhysics Conference on the Atomic and Molecular Physics of Ionized Gases, Granada, ES (Accessed April 24, 2024)