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Electron heating in rf-biased, inductively coupled plasmas

Published

Author(s)

Mark A. Sobolewski, J. -. Kim

Abstract

The effect of radio-frequency (rf) bias on electron density in an inductively coupled plasma reactor was measured using a wave cutoff probe, in Ar, CF4, and Ar/CF4 mixtures. At low source powers, we observed an increase in plasma electron density caused by an increase in ionization due to absorption of bias power by electrons via stochastic heating. The increase in electron density was proportional to the bias frequency and the square-root of the bias voltage. To explain these observations, the effect of bias-induced electron heating cannot be considered by itself; rather, its effect on the efficiency of the inductive source must also be considered.
Proceedings Title
19th Europhysics Conference on the Atomic and Molecular Physics of Ionized Gases
Conference Dates
July 15-19, 2008
Conference Location
Granada, ES

Keywords

electrical discharge, electron density, electron heating, inductively coupled, ionization, plasma, radio-frequency bias, wave cutoff probe

Citation

Sobolewski, M. and Kim, J. (2008), Electron heating in rf-biased, inductively coupled plasmas, 19th Europhysics Conference on the Atomic and Molecular Physics of Ionized Gases, Granada, ES (Accessed April 15, 2024)
Created July 15, 2008, Updated March 29, 2017