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Electro-physical Technique for Post-fabrication Measurements of CMOS Process Layer Thicknesses



Janet M. Cassard, Paul T. Vernier


This paper presents a combined physical and electrical post-fabrication method for determining the thicknesses of the various layers in a commercial 1.5-um complementary-metal-oxide-semiconductor (CMOS) foundry process available through MOSIS. Forty-two thickness values are obtained from physical step height measurements performed on thickness test structures and from electrical measurements of capacitances, sheet resistances, and resistivities. Appropriate expressions, numeric values, and uncertainties for each layer thickness are presented, along with a systematic nomenclature for interconnect and dielectric thicknesses.
Journal of Research (NIST JRES) -


CMOS, MEMS, nomenclature, platform height, step height, test structures, thickness, Young''''s modulus


Cassard, J. and Vernier, P. (2007), Electro-physical Technique for Post-fabrication Measurements of CMOS Process Layer Thicknesses, Journal of Research (NIST JRES), National Institute of Standards and Technology, Gaithersburg, MD, [online], (Accessed July 23, 2024)


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Created September 30, 2007, Updated October 12, 2021