Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Effect of Deposition Conditions on Mechanical Properties of Low-Temperature PECVD Silicon Nitride Films

Published

Author(s)

H Huang, K Winchester, A Suvorova, Yiping Liu, X Z. Hu, Brian R. Lawn, J Dell, L Faraone

Abstract

The effect of deposition conditions on characteristic mechanical properties elastic modulus and hardness of low-temperature PECVD silicon nitrides is investigated using nanoindentation. It is found that increase in substrate temperature, increase in plasma power and decrease in chamber gas pressure all result in increases in elastic modulus and hardness. Strong correlations between the mechanical properties and film density are demonstrated. The silicon nitride density in turn is shown to be related to the chemical composition of the films, particularly the silicon/nitrogen ratio.
Citation
Thin Solid Films
Volume
A435-436

Keywords

hardness, modulus, nanoindentation, silicon, silicon nitride, thin films

Citation

Huang, H. , Winchester, K. , Suvorova, A. , Liu, Y. , Hu, X. , Lawn, B. , Dell, J. and Faraone, L. (2005), Effect of Deposition Conditions on Mechanical Properties of Low-Temperature PECVD Silicon Nitride Films, Thin Solid Films, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=850126 (Accessed June 13, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created July 24, 2005, Updated October 12, 2021