Chen, L.
, Luciani, V.
and Miao, H.
(2011),
Effect of Alternating Ar and SF6/C4F8 Gas Flow in Si Nano-Structure Plasma Etching, Microelectronic Engineering, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=906648
(Accessed October 15, 2024)
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Effect of Alternating Ar and SF6/C4F8 Gas Flow in Si Nano-Structure Plasma Etching
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Abstract
Si is very reactive to normal plasma etchants such as fluorine based chemicals and the reactions are inherently isotropic. To fabricate small and/or high aspect ratio nanoscale structures in Si, anisotropic profile is necessary. SF6 combined with C4F8 has been demonstrated as a good gas combination for anisotropic Si etching [6]. In this study, Ar gas was introduced into the etching chamber to improve Si etching rate. In addition to mix Ar with F etching gases directly, an alternating Ar and F gas flow process was proposed. It is interesting to see that the Si etching profile, etching rate and etching selectivity are all improved by alternating Ar bombardment and SF6/C4F8 etching steps. The Si etching rate is determined by the Ar treatment step in alternating Ar and F two step process.Citation
Microelectronic Engineering
Volume
88
Issue
8
Pub Type
Journals
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Keywords
Plasma, Etching, Silicon
Citation
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Created August 1, 2011, Updated February 19, 2017