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Distinguishability of N Composition Profiles in SiON Films on Si by Angle-Resolved X-Ray Photoelectron Spectroscopy

Published

Author(s)

Cedric J. Powell, W S. Werner, W Smekal

Abstract

We report photoelectron intensities of N 1s and O 1s peaks at selected emission angles for an SiON film on Si with different assumed amounts and distributions of N in the film. The intensities were determined from an efficient simulation tool for x-ray photoelectron spectroscopy (XPS) that incorporates appropriate values of elastic- and inelastic-scattering parameters in each region of the specimen as well as the finite angular acceptance of the analyzer. Appreciable dispersion of the intensities was found only for the N 1s peak at an emission angle of 75o (with respect to the surface normal). Conventional analyses of angle-resolved XPS data that include such large emission angles are unlikely to be valid due to angle-dependent changes of the attenuation length.
Citation
Applied Physics Letters

Keywords

composition profiles, nitrogen, oxynitride, silicon, simulations, spectroscopy, x-ray photoelectron

Citation

Powell, C. , Werner, W. and Smekal, W. (2008), Distinguishability of N Composition Profiles in SiON Films on Si by Angle-Resolved X-Ray Photoelectron Spectroscopy, Applied Physics Letters (Accessed June 20, 2024)

Issues

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Created October 16, 2008