Distinguishability of N Composition Profiles in SiON Films on Si by Angle-Resolved X-Ray Photoelectron Spectroscopy
Cedric J. Powell, W S. Werner, W Smekal
We report photoelectron intensities of N 1s and O 1s peaks at selected emission angles for an SiON film on Si with different assumed amounts and distributions of N in the film. The intensities were determined from an efficient simulation tool for x-ray photoelectron spectroscopy (XPS) that incorporates appropriate values of elastic- and inelastic-scattering parameters in each region of the specimen as well as the finite angular acceptance of the analyzer. Appreciable dispersion of the intensities was found only for the N 1s peak at an emission angle of 75o (with respect to the surface normal). Conventional analyses of angle-resolved XPS data that include such large emission angles are unlikely to be valid due to angle-dependent changes of the attenuation length.
, Werner, W.
and Smekal, W.
Distinguishability of N Composition Profiles in SiON Films on Si by Angle-Resolved X-Ray Photoelectron Spectroscopy, Applied Physics Letters
(Accessed November 28, 2023)