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PUBLICATIONS

Defect Pair Formation by Implantation-Induced Stresses In High-Dose-Oxygen-Implanted-Silicon

Published

Author(s)

J. H. Lee, J Park, D. Venables, S. J. Krause, Peter Roitman
Proceedings Title
Proc., Materials Research Society Symposium
Volume
316
Conference Location
Boston, MA, USA
Pub Type
Conferences

Citation

Lee, J. , Park, J. , Venables, D. , Krause, S. and Roitman, P. (1994), Defect Pair Formation by Implantation-Induced Stresses In High-Dose-Oxygen-Implanted-Silicon, Proc., Materials Research Society Symposium, Boston, MA, USA (Accessed October 7, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created December 30, 1994, Updated October 12, 2021