Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Chemical Force Microscopy of 30 nm Half-Pitch Latent Images in Poly(Methyl-Methacrylate)

Published

Author(s)

John T. Woodward IV, Harun Solak

Abstract

Poly(methyl-methacrylate) (PMMA) thin films were spun cast on silicon and exposed to a 30 nm half-pitch EUV interference pattern. The sample was imaged by chemical force microscope (CFM) using a methyl functionalized AFM tip in lateral force mode. The CFM images can clearly resolve the latent image of the 30 nm lines and show increasing contrast with increasing EUV dosage. Simultaneously collected topography data shows a densification of the PMMA film in the exposed regions that is proportional to the dose. Images of regions with topographic and chemical defects show the two modes give independent information.
Citation
Journal of Vacuum Science and Technology B

Keywords

chemical force microscopy, EUV lithography, latent image photoresist

Citation

Woodward IV, J. and Solak, H. (2008), Chemical Force Microscopy of 30 nm Half-Pitch Latent Images in Poly(Methyl-Methacrylate), Journal of Vacuum Science and Technology B (Accessed June 14, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created October 16, 2008