Chemical Force Microscopy of 30 nm Half-Pitch Latent Images in Poly(Methyl-Methacrylate)
John T. Woodward IV, Harun Solak
Poly(methyl-methacrylate) (PMMA) thin films were spun cast on silicon and exposed to a 30 nm half-pitch EUV interference pattern. The sample was imaged by chemical force microscope (CFM) using a methyl functionalized AFM tip in lateral force mode. The CFM images can clearly resolve the latent image of the 30 nm lines and show increasing contrast with increasing EUV dosage. Simultaneously collected topography data shows a densification of the PMMA film in the exposed regions that is proportional to the dose. Images of regions with topographic and chemical defects show the two modes give independent information.
Journal of Vacuum Science and Technology B
chemical force microscopy, EUV lithography, latent image photoresist
Woodward IV, J.
and Solak, H.
Chemical Force Microscopy of 30 nm Half-Pitch Latent Images in Poly(Methyl-Methacrylate), Journal of Vacuum Science and Technology B
(Accessed December 11, 2023)