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Characterizing Interfacial Roughness by Light Scattering Ellipsometry

Published

Author(s)

Thomas A. Germer

Abstract

The polarization of light scattered by oxide films thermally grown on photolithographically-generated microrough silicon surfaces was measured as functions of scattering angle. Using the predictions of first-order vector perturbation theory for scattering from interfacial roughness to interpret the results, the roughness of each interface and the correlation function between the two interfaces can be determined. The results show the spatial frequency dependence of the SiO2/Si interface smoothening. The impact of these results on the inspection of silicon wafers with dielectric films is discussed.
Proceedings Title
Characterization and Metrology for ULSI Technology 2000, International Conference | | Characterization and Metrology for ULSI Technology |AIP
Volume
550
Conference Dates
June 26-29, 2000
Conference Title
AIP Conference Proceedings

Keywords

ellipsometry, film correlation, roughness, scatter, silicon dioxide, thin films

Citation

Germer, T. (2001), Characterizing Interfacial Roughness by Light Scattering Ellipsometry, Characterization and Metrology for ULSI Technology 2000, International Conference | | Characterization and Metrology for ULSI Technology |AIP (Accessed June 16, 2024)

Issues

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Created June 1, 2001, Updated February 17, 2017