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AlGaAs Composition Measurements from In Situ Optical Reflectance

Published

Author(s)

Kristine A. Bertness, J T. Armstrong, Ryna B. Marinenko, Larry Robins, Albert J. Paul, Joseph G. Pellegrino, Paul M. Amirtharaj, Deane Chandler-Horowitz

Abstract

We measure the composition of AlGaAs layers during epitaxial crystal growth using in situ normal-incidence optical reflectance supported by independent methods of measuring growth rate. The results are compared with conventional ex situ characterization.
Proceedings Title
Conf. Dig., LEOS Summer Topical on Optical Sensing in Semiconductor Manufacturing
Conference Dates
July 24-28, 2000
Conference Location
Aventura, FL, USA

Keywords

AlGaAs, composition measurement, compound semiconductors, in situ monitoring, molecular beam epitaxy, optical reflectance

Citation

Bertness, K. , Armstrong, J. , Marinenko, R. , Robins, L. , Paul, A. , Pellegrino, J. , Amirtharaj, P. and Chandler-Horowitz, D. (2000), AlGaAs Composition Measurements from In Situ Optical Reflectance, Conf. Dig., LEOS Summer Topical on Optical Sensing in Semiconductor Manufacturing, Aventura, FL, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=26476 (Accessed April 20, 2024)
Created June 30, 2000, Updated October 15, 2021