Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Accelerated Tests for Simulating Low Dose Rate Gain Degradation of Lateral and Substrate PNP Bipolar Junction Transistors

Published

Author(s)

S C. Witczak, R D. Schrimpf, K F. Galloway, D M. Fleetwood, R L. Pease, James M. Puhl, D M. Schmidt, W R. Combs, John S. Suehle
Citation
IEEE Transactions on Nuclear Science
Volume
43

Citation

Witczak, S. , Schrimpf, R. , Galloway, K. , Fleetwood, D. , Pease, R. , Puhl, J. , Schmidt, D. , Combs, W. and Suehle, J. (1996), Accelerated Tests for Simulating Low Dose Rate Gain Degradation of Lateral and Substrate PNP Bipolar Junction Transistors, IEEE Transactions on Nuclear Science (Accessed June 24, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created December 31, 1995, Updated October 12, 2021