Dr. Pookpanratana is a project leader within the Nanoscale Imaging Group in the Nanoscale Device Characterization Division of the Physical Measurement Laboratory (PML). Dr. Pookpanratana’s current research interests include investigating the electronic and chemical properties of materials (e.g., topological insulators) for advancing quantum-based technologies, and on the development and advancement of photoemission electron microscopy (PEEM).
Prior to 2019, Dr. Pookpanratatana’s research activities at NIST included the electronic structure of molecular organic semiconductors and other candidate nanoelectronic systems. With the latter, a complementary measurement approach was applied with electrical characterization, electron and optical spectroscopies. During her graduate studies, she applied both lab- and synchrotron-based x-ray and electron spectroscopies to thin-film III-nitrides, CIGS- and CdTe-based photovoltaics.
S. Pookpanratana, R. France, R. Félix, R. Wilks, L. Weinhardt, T. Hofmann, L. Tati Bismaths, F. Kronast, S. Mulcahy, T. D. Moustakas, M. Bär, and C. Heske, “Microstructure of Vanadium-Based Contacts on n-type GaN,” J. Phys. D: Appl. Phys. 45, 105401 (2012).
S. Pookpanratana, X. Liu, N. R. Paudel, L. Weinhardt, M. Bär, Y. Zhang, A. Ranasinghe, F. Khan, M. Blum, W. Yang, A. D. Compaan, and C. Heske, “Effects of post-deposition treatments on surfaces and interfaces in CdTe/CdS Solar Cells,” Appl. Phys. Lett. 97, 172109 (2010).
S. Zhang, […] S. J. Pookpanratana, “Controllable, Wide-Ranging n- and p-Doping of Monolayer Group 6 Transition-metal Disulfides and Diselenides” Advanced Materials 30, 1802991 (2018).