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Pragya Shrestha (Fed)

Electrical Engineer

Pragya R. Shrestha is an Electrical Engineer in Advanced Electronics Group in the Nanoscale Device Characterization Division at NIST. Her previous work includes developing innovative electrical device characterization techniques for novel devices and developing highly sensitive broadband ESR (Electron Spin Resonance) technique relevant to a wide-ranging spectrum of material system. Her current focus is device and circuits characterization at low temperatures and ultra-fast time dependent measurement of device operation to understand device physics and reliability at cryogenic temperatures.

Publications

Impact of Deep-Level Traps on Carrier Mobility in β-Ga2O3 MOSFETs

Author(s)
Ory Maimon, Neil Moser, Pragya Shrestha, Minyeong Kim, Sang-Mo Koo, Kyle Liddy, Andrew Green, Kelson Chabak, Sujitra Pookpanratana, Qiliang Li
Ultra-wide bandgap β-Ga2O3-based power devices are promising and rapidly developing, but its mobility in field-effect transistors (FET) falls short of the...

Patents (2018-Present)

Depiction of Non-Resonant Electron Spin Resonant Probe And Associated Hardware

Non-Resonant Electron Spin Resonant Probe And Associated Hardware

NIST Inventors
Jason Campbell , Jason Ryan , Kin (Charles) Cheung , Robert Gougelet and Pragya Shrestha
This invention allows citizens to assess themselves (at the 2 Gy ± 0.5 Gy exposure level) using a dosimeter embedded in commercial and non-commercial identification cards. Patients can then seek appropriate action without the need for first responder and/ or public health official intervention. The
Created August 3, 2019, Updated May 17, 2024
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