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Pragya Shrestha (Fed)

Electrical Engineer

Pragya R. Shrestha is an Electrical Engineer in Advanced Electronics Group in the Nanoscale Device Characterization Division at NIST. Her previous work includes developing innovative electrical device characterization techniques for novel devices and developing highly sensitive broadband ESR (Electron Spin Resonance) technique relevant to a wide-ranging spectrum of material system. Her current focus is device and circuits characterization at low temperatures and ultra-fast time dependent measurement of device operation to understand device physics and reliability at cryogenic temperatures.

Publications

High-endurance bulk CMOS one-transistor cryo-memory

Author(s)
Alexander Zaslavsky, Pragya Shrestha, Valery Ortiz Jimenez, Jason Campbell, Curt Richter
Previously we reported a compact one-transistor (1T) 180 nm bulk CMOS cryo-memory with a high 10^7 I_1/I_0 memory window and long 800 s retention time based on

A 4-mW 2.2-6.9 GHz LNA in 16nm FinFET Technology for Cryogenic Applications

Author(s)
Runzhou Chen, Hamdi Mani, Phil Marsh, Richard Al Hadi, Pragya Shrestha, Jason Campbell, Christopher Chen, Hao-Yu Chen, Kosmas Galatsis, Mau-Chung Frank Chang
This work presents the design and measurement of a low-power wide-band cryogenic low-noise amplifier (LNA) that operates in a wide temperature range using 16nm

Characterization of Noise in CMOS Ring Oscillators at Cryogenic Temperatures

Author(s)
Prashansa Mukim, Pragya Shrestha, Advait Madhavan, Nitin Prasad, Jason Campbell, Forrest Brewer, Mark Stiles, Jabez J. McClelland
Allan deviation provides a means to characterize the time-dependence of noise in oscillators and potentially identify the source characteristics. Measurements
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Patents (2018-Present)

Non-Resonant Electron Spin Resonant Probe And Associated Hardware

NIST Inventors
Jason Campbell , Jason Ryan , Kin (Charles) Cheung , Robert Gougelet and Pragya Shrestha
This invention details a non-resonant probe designed to measure changes in the density of broken bonds (unpaired electrons) in materials exposed to ionizing radiation. The probe functions to excite and detect electron spin resonance transitions in these materials. Accumulated radiation dose can then
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Created August 3, 2019, Updated May 17, 2024