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Pragya Shrestha (Fed)

Electrical Engineer

Pragya R. Shrestha is an Electrical Engineer in Advanced Electronics Group in the Nanoscale Device Characterization Division at NIST. Her previous work includes developing innovative electrical device characterization techniques for novel devices and developing highly sensitive broadband ESR (Electron Spin Resonance) technique relevant to a wide-ranging spectrum of material system. Her current focus is device and circuits characterization at low temperatures and ultra-fast time dependent measurement of device operation to understand device physics and reliability at cryogenic temperatures.

Publications

Fully transparent GaN/InGaN LED as a position sensitive detector

Author(s)
Christine McGinn, Keith Behrman, Emily Bittle, Pragya Shrestha, Qingyuan Zeng, Vikrant Kumar, Christina Hacker, Ioannis Kymissis
Commercial imaging technologies have an increasing need for an accurate, in-situ beam locator to ensure laser alignment during operation. In this work, gallium

High-endurance bulk CMOS one-transistor cryo-memory

Author(s)
Alexander Zaslavsky, Pragya Shrestha, Valery Ortiz Jimenez, Jason Campbell, Curt Richter
Previously we reported a compact one-transistor (1T) 180 nm bulk CMOS cryo-memory with a high 10^7 I_1/I_0 memory window and long 800 s retention time based on

Patents (2018-Present)

Depiction of Non-Resonant Electron Spin Resonant Probe And Associated Hardware

Non-Resonant Electron Spin Resonant Probe And Associated Hardware

NIST Inventors
Jason Campbell , Jason Ryan , Kin (Charles) Cheung , Robert Gougelet and Pragya Shrestha
This invention allows citizens to assess themselves (at the 2 Gy ± 0.5 Gy exposure level) using a dosimeter embedded in commercial and non-commercial identification cards. Patients can then seek appropriate action without the need for first responder and/ or public health official intervention. The
Created August 3, 2019, Updated May 17, 2024
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