Pavel Kabos

Publications

Imaging Carrier Inhomogeneities in Ambipolar Tellurene Field Effect Transistors

February 12, 2020

Author(s)

Samuel Berweger, Gang Qiu, Yixiu Wang, Benjamin Pollard, Kristen L. Genter, Thomas M. Wallis, Wenzhuo Wu, Peide Ye, Pavel Kabos

Bipolar transport underpins a wide range of semiconductor homojunction device functionalities such as pn junctions or transistors. The capability to image and

Design of an intelligent PYTHON code to run coupled and license-free finite-element and statistical analysis software for calibration of near-field scanning microwave microscopes

October 2, 2019

Author(s)

Jeffrey T. Fong, Nathanael A. Heckert, James J. Filliben, Pedro V. Marcal, Samuel Berweger, Thomas M. Wallis, Pavel Kabos

To calibrate near-field scanning microwave microscopes (NSMM) for defect detection and characterization in semiconductors, it is common to develop a parametric

Disentangling topographic contributions to near-field scanning microwave microscopy images

February 1, 2019

Author(s)

Samuel Berweger, Thomas M. Wallis, Pavel Kabos, Kevin J. Coakley

We develop empirical models to predict the contribution of topographicvariations to near-field scanning probe microwave microscopy (NSSM)images.In particular

Chapter 11. Dopant profiling in semiconductor nanoelectronics

September 17, 2017

Author(s)

Thomas M. Wallis, Pavel Kabos

As nanoelectronic device dimensions are scaled down to atomic sizes, device performance becomes more and more sensitive to the exact arrangement of atoms

Chapter 6. Characterization of nanofiber devices

September 17, 2017

Author(s)

Thomas M. Wallis, Pavel Kabos

Previous chapters have introduced and described a variety of measurement techniques for RF nanoelectronic devices. Here, our objective is to work through an

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