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Jason Ryan

Dr. Ryan is leader of the Magnetic Resonance Spectroscopy Project in the Alternative Computing Group in the Nanoscale Device Characterization Division of the Physical Measurement Laboratory (PML). He received the B.S. degree in Physics from Millersville University, Millersville, PA in 2004. He received the M.S. degree in Engineering Science and a Ph.D. in Materials Science and Engineering from The Pennsylvania State University, University Park, PA in 2006 and 2010, respectively. In 2010, he was awarded a National Research Council (NRC) post-doctoral fellowship which he spent at NIST where he is still currently employed. He has contributed to more than 65 peer reviewed technical publications and over 100 presentations at international conferences. Dr. Ryan also holds 3 patents. He has been heavily involved in the technical and managerial committees of both the IEEE International Reliability Physics Symposium and IEEE International Integrated Reliability Workshop conferences, having served as General Chair of the latter in 2015. His research interests involve utilizing magnetic resonance spectroscopy to understand the physics and kinetics of atomic-scale defects responsible for critical failure and drift mechanisms in advanced electronic devices and materials.

Projects

Selected Publications

Publications

Parasitic engineering for RRAM control

Author(s)
Pragya R. Shrestha, David M. Nminibapiel, Dmitry Veksler, Jason P. Campbell, Jason T. Ryan, helmut Baumgart, Kin P. Cheung
The inevitable current overshoot which follows forming or switching of filamentary resistive random access memory (RRAM) devices is often perceived as a source
Created March 12, 2019, Updated March 6, 2020