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Cooper Voigt (Fed)

Cooper Voigt is a materials research engineer in the Advanced Electronics Group in the Nanoscale Device Characterization Division of the Physical Measurement Laboratory (PML). He earned his B.S. and M.S. degrees in materials science and engineering from Drexel University, Philadelphia, PA in 2018, where he investigated synthesis and characterization of two-dimensional carbides, known as MXenes. He earned his Ph.D. in materials science and engineering from Georgia Institute of Technology, Atlanta, GA in 2024, where he investigated synthesis and characterization of indium selenide films. In 2024, Cooper joined NIST to develop magnetic resonance and electrical testing techniques to characterize the reliability of wide-bandgap, power semiconductor devices.

Publications

Observation and Analysis of Nine Orders of Magnitude Memory Window in pn GaN Regrowth Vertical Diodes

Author(s)
Stephen Moxim, Gelu Comanescu, Cooper Voigt, Ory Maimon, Behrang Hamadani, Andrew Winchester, Emily Bittle, Qiliang Li, Travis Anderson, Jennifer Hite, Albert Davydov, Jason Campbell, Sujitra Pookpanratana, Jason Ryan
Wide bandgap semiconductors, including gallium nitride (GaN), are crucial for next-generation power electronics due to their superior properties compared to...

Defects involved in TDDB-stressed SiC MOSFET

Author(s)
Cooper Voigt, Stephen Moxim, Jason Campbell, Akin Akturk, Jason Ryan
We report electrically-detected magnetic resonance, electron spin resonance, charge pumping and transfer characteristics of SiC lateral MOSFETs before and after...
Created October 23, 2024, Updated March 12, 2025
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