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Search Publications by: Cooper Voigt (Fed)

Displaying 1 - 2 of 2

Observation and Analysis of Nine Orders of Magnitude Memory Window in pn GaN Regrowth Vertical Diodes

September 1, 2026

Author(s)

Stephen Moxim, Gelu Comanescu, Cooper Voigt, Ory Maimon, Behrang Hamadani, Andrew Winchester, Emily Bittle, Qiliang Li, Travis Anderson, Jennifer Hite, Albert Davydov, Jason Campbell, Sujitra Pookpanratana, Jason Ryan

Wide bandgap semiconductors, including gallium nitride (GaN), are crucial for next-generation power electronics due to their superior properties compared to silicon. However, challenges in their fabrication, particularly with epitaxial regrowth for

Defects involved in TDDB-stressed SiC MOSFET

April 28, 2026

Author(s)

Cooper Voigt, Stephen Moxim, Jason Campbell, Akin Akturk, Jason Ryan

We report electrically-detected magnetic resonance, electron spin resonance, charge pumping and transfer characteristics of SiC lateral MOSFETs before and after accelerated TDDB stress at 9 MV/cm field. The different responses measured via each technique

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