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Rob Jones, Jerome Cheron, Bryan Bosworth, Ben Jamroz, Dylan Williams, Miguel Urteaga, Ari Feldman, Peter Aaen
In this paper, we investigate the effect of two calibration errors, probe placement and capacitance per unit length, on transistor characterization from 220 GHz
Florian Bergmann, Meagan Papac, Nick Jungwirth, Bryan Bosworth, Tomasz Karpisz, Anna Osella, Lucas Enright, Eric Marksz, Angela Stelson, Chris Long, Nate Orloff
DyScO3 (DSO) is an attractive substrate on which to grow epitaxial thin films with extraordinary materials physics. However, its highly anisotropic permittivity
Bryan Bosworth, Nick Jungwirth, Kassiopeia Smith, Jerome Cheron, Franklyn Quinlan, Madison Woodson, Jesse Morgan, Andreas Beling, Ari Feldman, Dylan Williams, Nate Orloff, Chris Long
We demonstrate fine phase and amplitude control of millimeter waves, measured on-wafer using an electro-optic frequency comb, programmable spectral filter, and
Jerome Cheron, Rob Jones, Richard Chamberlin, Dylan Williams, Miguel Urteaga, Kassi Smith, Nick Jungwirth, Bryan Bosworth, Chris Long, Nate Orloff, Peter Aaen, Ari Feldman
We report two terahertz monolithic integrated circuit (TMIC) amplifiers operating at 500 GHz. The 6-stage single-ended power amplifiers use Teledyne's 130 nm
Jerome Cheron, Dylan Williams, Richard Chamberlin, Miguel Urteaga, Kassi Smith, Nick Jungwirth, Bryan Bosworth, Chris Long, Nate Orloff, Ari Feldman
The indium phosphide (InP) 130 nm double-heterojunction bipolar transistor (DHBT) offers milliwatts of output power and high signal amplification in the lower