Effects of Etching Time and Wafer Miscut on the Morphology of Etched Si(111) Surfaces

Published

January 1, 2002

Author(s)

Hui Zhou, Joseph Fu, S Gonda, Richard M. Silver

Abstract

In order to meet leading edge and future measurement and calibration needs, NIST has been pursuing the development of atom-based dimensional standards and measurement methods. There are a few new, key concepts underlying this effort, which are intended to enable the measurement of feature width or spacing with nanometer or atomic resolution and accuracy. I addition to the critical measurement elements, it is essential to enable fabrication methods for the manufacture of calibration test structures or to precisely mark a measurement region.

Proceedings Title

Procedings of SPIE, Nanostructure Science, Metrology, and Technology, Martin C. Peckerar, Michael T. Postek, Jr., Editors

Volume

4608

Conference Dates

September 5, 2001

Conference Location

Gaithersburg, MD

Conference Title

Electronics Sciences

Pub Type

Conferences

Keywords

atom-based standards, hydrogen termination, nanomanufacturing, nanometrology, nanotechnology, SI 111, STM

Citation

Zhou, H. , Fu, J. , Gonda, S. and Silver, R. (2002), Effects of Etching Time and Wafer Miscut on the Morphology of Etched Si(111) Surfaces, Procedings of SPIE, Nanostructure Science, Metrology, and Technology, Martin C. Peckerar, Michael T. Postek, Jr., Editors, Gaithersburg, MD (Accessed October 13, 2025)