A Numerical Investigation of the Effects of Gas-Phase Particle Formation on Silicon Film Deposition from Silane

Published

January 1, 2003

Author(s)

D M. Kremer, R W. Davis, Elizabeth F. Moore, S H. Ehrman

Abstract

This paper presents a systematic investigation of the effects of particle formation on silicon film deposition from silane in a vertical rotating disk CVD reactor. The numerical model uses the Sandia SPIN code to simulate the reacting flow and heat transfer. A moment transport aerosol model simulates the nucleation, growth and transport of silicon particles. The effects of total reactor pressure, temperature, rotation rate, inlet gas composition, and rate of particle growth via condensation on the deposition rate of the silicon film are investigated. Results are presented which detail the scavenging of film growth precursor molecules by particles through a series of simulations both with and without an aerosol component. Conditions under which the particles affect the deposition rate have been identified. Additionally, the use of a chemically reactive precursor (H2) is shown to effectively suppress the formation of particles in the gas-phase. The effect of this particle suppression on the deposition rate is discussed.

Citation

Journal of Crystal Growth

Volume

247

Issue

No. 3-4

Pub Type

Journals

Keywords

aerosol dynamics, chemical vapor deposition, film growth, numerical modeling, reacting flow, silane decomposition

Citation

Kremer, D. , Davis, R. , Moore, E. and Ehrman, S. (2003), A Numerical Investigation of the Effects of Gas-Phase Particle Formation on Silicon Film Deposition from Silane, Journal of Crystal Growth (Accessed October 22, 2025)