Bano, G.
, Rozsa, K.
and Gallagher, A.
(2008),
uses of Small Particle Growth in Silane Discharges, Aip Conference Proceedings
(Accessed October 15, 2025)
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uses of Small Particle Growth in Silane Discharges
Published
Author(s)
G Bano, K Rozsa, Alan Gallagher
Abstract
Silicon-based particles that grow in a silane radio frequency (RF) discharge are studied by light scattering. Average particle size and the corresponding particle density are measured as functions of silane density, RF voltage, and chamber temperature (t). The particle density is almost independent of T, as is the film growth rate. in contrast, the particle-size growth rate (G) decreases by a large factor as T ncreases from 300-500 K. It is also observed that the few percent of higher silanes that are produced by the discharge cause a major increase in G.Citation
Aip Conference Proceedings
Pub Type
Journals
Keywords
amorphous silicon, particles, plasma, silane
Citation
Issues
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Created October 16, 2008