A Precision Capacitance Cell for Measurement of Thin Film Out-of-Plane Expansion Part III. Conducting and Semiconducting Materials

Published

October 1, 2001

Author(s)

Chad R. Snyder, F I. Mopsik

Abstract

This paper describes the construction, calibration, and use of a precision capacitance-based metrology for the measurement of the thermal and hygrothermal (swelling) expansion of thin films. It is demonstrated that with this version of our capacitance cell, materials ranging in electrical properties from insulator to conductors can be measured. The results of our measurements on p-type <100> oriented single crystal silicon are compared to the recommended standard reference values from the literature and are shown to be in excellent agreement.

Citation

IEEE Transactions on Instrumentation and Measurement

Volume

50

Issue

No. 5

Pub Type

Journals

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Keywords

capacitance cell, coefficient of thermal expansion (CTE), guarded electrode, highsensitivity displacement, inner layer dielectrics, polymers, thermal expansion, thin films

Citation

Snyder, C. and Mopsik, F. (2001), A Precision Capacitance Cell for Measurement of Thin Film Out-of-Plane Expansion Part III. Conducting and Semiconducting Materials, IEEE Transactions on Instrumentation and Measurement, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852836 (Accessed October 2, 2025)