Bennett, H.
and Hung, H.
(2003),
Dependence of Electron Density on Fermi Energy in N-Type Gallium Antimonide, Journal of Research (NIST JRES), National Institute of Standards and Technology, Gaithersburg, MD, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=50675 (Accessed April 26, 2026)
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Dependence of Electron Density on Fermi Energy in N-Type Gallium Antimonide
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Author(s)
H S. Bennett,
Abstract
The majority electron density as a function of the Fermi energy is calculated in Zinc Blende, n-type GaSb for donor densities between 1016 cm-3 and 1019 cm-3. These calculations solve the charge neutrality equation self-consistently for a four-band model (three conduction sub-bands at Γ, L, and X and one equivalent valence band at Γ of Ga SB. Our calculations assume parabolic densities of states and thus do not treat the density-of-states modifications due to high concentrations of dopants, many body effects, and non-parabolicity of the bands. Even with these assumptions, the results are important for interpreting optical measurements such as Raman measurements that are proposed as a non-destructive method for wafer acceptance tests.Citation
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Created May 31, 2003, Updated October 12, 2021