Reliability of Ultra-Thin Silicon Dioxide Under Substrate Hot-Electronic, Substrate Hot-Hole, and Tunneling Stress

Published

November 1, 2001

Author(s)

Eric M. Vogel, Monica D. Edelstein, John S. Suehle

Abstract

Substrate hot-electron and substrate hot-hole injection experiments are used to provide insight into defect generation and breakdown of ultra-thin silicon dioxide under constant voltage tunneling stress. Results from substrate hot-electron injection confirm that energetic electrons are responsible for degradation and breakdown of ultra-thin silicon dioxide under tunneling stress conditions. Substrate hot-hole injection experiments suggest that mechanisms other than trapping of hotholes may be responsible for the breakdown ultra-thin silicon dioxide.

Citation

Microelectronic Engineering

Pub Type

Journals

Keywords

reliability, silicon dioxide, tunneling, MOS, semiconductor, breakdown

Citation

Vogel, E. , Edelstein, M. and Suehle, J. (2001), Reliability of Ultra-Thin Silicon Dioxide Under Substrate Hot-Electronic, Substrate Hot-Hole, and Tunneling Stress, Microelectronic Engineering (Accessed May 2, 2026)

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