Fundamental Limits of Optical Patterned Defect Metrology

Published

November 14, 2011

Author(s)

Richard M. Silver, Bryan Barnes, Martin Sohn, Hui Zhou, Jing Qin

Abstract

The semiconductor manufacturing industry is now facing serious challenges in achieving defect detection rates with acceptable throughput and accuracy. With conventional bright-field and dark-field inspection methods now at their limits, it has become essential to explore alternative optical methods such as angle-resolved scatterfield microscopy, 193 nm short wavelength solutions, and coherent illumination solutions. In this paper we evaluate new optical illumination engineering techniques recently developed at the National Institute of Standards and Technology (NIST). This methodology, using a scatterfield optical microscope, is evaluated through simulation and experiment using die-to-die defect detection methods for several defect types on predefined intentional defect array (IDA) wafers, demonstrating its capability for extending high throughput defect inspection beyond the 22 nm node. We investigate source optimization for angle and polarization resolved illumination, measurement wavelengths down to 193 nm and interference microscopy using electromagnetic simulations and laboratory apparatus. In addition, we report the systematic evaluation of defect sensitivity as a function of illumination wavelength.

Proceedings Title

AIP Proceedings

Volume

1395

Conference Dates

May 23-26, 2011

Conference Location

Grenoble, FR

Conference Title

2011 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics

Pub Type

Conferences

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DOI Link

Citation

Silver, R. , Barnes, B. , Sohn, M. , Zhou, H. and Qin, J. (2011), Fundamental Limits of Optical Patterned Defect Metrology, AIP Proceedings, Grenoble, FR, [online], https://doi.org/10.1063/1.3657912 (Accessed October 24, 2025)