MOSFETs made from GaN nanowires with fully conformal cylindrical gates

Published

December 2, 2011

Author(s)

Paul T. Blanchard, Kristine A. Bertness, Todd E. Harvey, Aric W. Sanders, Norman A. Sanford, Steven M. George, Dragos Seghete

Abstract

We report novel metal-oxide-semiconductor field effect transistors (MOSFETs) based on individual gallium nitride (GaN) nanowires with fully conformal cylindrical gates. The W/Al₂O₃ gates were deposited by atomic layer deposition. Reverse-bias breakdown voltages exceeded the largest gate voltage tested (-35 V). The nanowire MOSFETs showed complete pinchoff, with threshold voltages between -4 and -12 V. Maximum transconductances exceeded 10 υS, and ON/OFF current ratios higher than 10⁸ were measured. Significant gating hysteresis and memory effects were also present, indicative of charge traps. Although further optimization is needed, these results represent a promising step forward in the development of efficient GaN nanowire-based FETs.

Citation

IEEE Transactions on Nanotechnology

Volume

11

Issue

3

Pub Type

Journals

Download Paper

https://doi.org/10.1109/TNANO.2011.2177993

Keywords

nanotechnology, gallium nitride, nanowires, atomic layer deposition, MOSFET

Citation

Blanchard, P. , Bertness, K. , Harvey, T. , Sanders, A. , Sanford, N. , George, S. and Seghete, D. (2011), MOSFETs made from GaN nanowires with fully conformal cylindrical gates, IEEE Transactions on Nanotechnology, [online], https://doi.org/10.1109/TNANO.2011.2177993 (Accessed October 10, 2025)