Yu, L.
, Cheung, K.
, Tilak, V.
, Dunne, G.
, Matocha, K.
, Campbell, J.
, Suehle, J.
and Sheng, K.
(2009),
Wafer-level Hall Measurement on SiC MOSFET, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=907098
(Accessed October 11, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Wafer-level Hall Measurement on SiC MOSFET
Published
Author(s)
, , Vinayak Tilak, Greg Dunne, Kevin Matocha, , , Kuang Sheng
Abstract
Low channel mobility is one of the biggest challenges to commercializing SiC MOSFETs. Accurate mobility measurement is essential for understanding the mechanisms that lead to low mobility. The most widely used effective mobility measurements overestimate the inversion charge for devices that have high level of defects. Mobility measured by the Hall effect is more accurate; however the conventional Hall mobility measurement is tedious. In this work, we demonstrate a wafer-level Hall measurement technique, which is simple and convenient to implement. With this method, extensive study of the mobility degradation is possible.Pub Type
Talks
Download Paper
Keywords
MOSFET, channel mobility, Hall mobility
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact [email protected].
Created October 16, 2009, Updated February 19, 2017