Skip to main content

NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Organosilicate Polymer E-Beam Resists with High Resolution, Sensitivity and Stability

Published

Author(s)

Christopher Soles, Richard Kasica, Hae-Jeong Lee, Jae H. Sim, Sung-Il Lee, Ki-Bum Kim, Hyun-Mi Kim, Do Y. Yoon

Abstract

Hydrogen silsesquioxane (HSQ) is an attractive electron-beam (e-beam) resist for sub-20 nm lithography due to its high resolution, excellent line-edge-roughness (LER), and good plasma etch resistance. However, the sensitivity and long-term stability of HSQ need to be significantly improved to have HSQ resists adopted for volume manufacturing. Here we develop novel organosilicate e-beam resists with improved e-beam sensitivity and stability as an alternative to HSQ resists. Copolymers of norbornene ethyltrimethoxysilane (NETMS) with 1,2-bis(triethoxysilyl)ethane, synthesized via acidcatalyzed sol-gel reactions, show excellent e-beam sensitivity with ca. a six-fold reduction in the critical dose as compared with HSQ but poor LER characteristics. Terpolymers are then synthesized using pchloromethylphenyl trimethoxysilane (p-CMPTMS), NETMS and tetraethoxysilane (TEOS), which exhibit significant improvement in sensitivity as compared with previously reported materials, together with high resolution patterns and long-term stability. High resolution patterns of features as small as 20 nm with excellent LER are successfully fabricated employing organosilicate terpolymers using a 100 keV e-beam. The dose for patterning 20 nm lines is reduced from 4000 μC/cm2 for HSQ to 900 μC/cm2 for an optimized terpolymer resist. FT-IR measurements suggest that the main reason for the increased e-beam sensitivity is chain transfer reaction between the norbornene moieties, which provide an efficient cross-linking mechanism by the e-beam generated radicals.
Citation
Applied Organometallic Chemistry

Keywords

lithography, pattering, electron beam, organosilicate, nanostructure

Citation

Soles, C. , Kasica, R. , Lee, H. , Sim, J. , Lee, S. , Kim, K. , Kim, H. and Yoon, D. (2013), Organosilicate Polymer E-Beam Resists with High Resolution, Sensitivity and Stability, Applied Organometallic Chemistry, [online], https://doi.org/10.1002/aoc.2985, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=913490 (Accessed October 8, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created February 28, 2013, Updated September 29, 2025
Was this page helpful?