Veksler, D.
, Bersuker, G.
, Bushmaker, A.
, Mason, M.
, Shrestha, P.
, Cheung, K.
, Campbell, J.
, Rueckes, T.
, Clevlend, L.
, Luan, H.
and Gilmer, D.
(2020),
Memory update characteristics of carbon nanotube memristors (NRAM) under circuitry-relevant operation conditions, 2020 International Reliability Physics Symposium, Dallas, TX, US, [online], https://doi.org/10.1109/IRPS45951.2020.9128335, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=929727
(Accessed October 20, 2025)
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Memory update characteristics of carbon nanotube memristors (NRAM) under circuitry-relevant operation conditions
Published
Author(s)
Dmitry Veksler, gennadi bersuker, A W. Bushmaker, Maribeth Mason, , , , T Rueckes, L Clevlend, H Luan, D C. Gilmer
Abstract
Carbon nanotubes (CNT) resistance-change memory devices were assessed for neuromorphic applications under high frequency use conditions by employing the ultra-short (100 ps -10 ns) voltage pulse technique. Under properly selected operation conditions, CNTs demonstrate switching characteristics promising for various NN implementations.Conference Dates
April 28-May 30, 2020
Conference Location
Dallas, TX, US
Conference Title
2020 International Reliability Physics Symposium
Pub Type
Conferences
Download Paper
Keywords
Neuromorphic computing, CNT, RRAM
Citation
Issues
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Created June 29, 2020, Updated October 12, 2021