Metrology and Characterization Challenges for Emerging Research Materials and Devices

Published

December 28, 2011

Author(s)

Yaw S. Obeng, C. M. Garner, Dan Herr

Abstract

The International Technology Roadmap for Semiconductors (ITRS) Emerging Research Materials (ERM) and Emerging Research Devices (ERD) Technology Workgroups have identified materials and devices that could enable continued increases in the density and performance of future integrated circuit(IC) technologies and the challenges that must be overcome; however, this will require significant advances in metrology and characterization to enable progress. New memory devices and beyond CMOS logic devices operate with new state variables (e.g. spin, redox state, etc.) and metrology and characterization techniques are needed to verify their switching mechanisms and scalability, and enable improvement of operation of these devices. Similarly, new materials and processes are needed to enable these new devices. Additionally, characterization is needed to verify that the materials and their interfaces have been fabricated with required quality and performance.

Citation

Frontiers of Characterization and Metrology for Nanoelectronics: 2011

Publisher Info

American Institute of Physics, TBD, MD

Pub Type

Book Chapters

Download Paper

DOI Link

Keywords

ITRS, Emerging, Materials, Metrology, ESH, Nanomaterials

Citation

Obeng, Y. , Garner, C. and Herr, D. (2011), Metrology and Characterization Challenges for Emerging Research Materials and Devices, Frontiers of Characterization and Metrology for Nanoelectronics: 2011, American Institute of Physics, TBD, MD, [online], https://doi.org/10.1063/1.3657864 (Accessed October 11, 2025)