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Functional Nanostructured Materials Group

The Functional Nanostructured Materials Group develops measurement methods, models, data, standards, and science for the electrical, chemical, and magnetic properties of nanostructured inorganic materials, including metals and semiconductors, as related to their microstructure and processing. The Group provides expertise in nanostructure fabrication, in situ processing measurements, models for process control, and microscopy techniques needed to

Group Competence

  • Deposition and evaporation of thin films and alloys
  • Electrodeposition of metals and alloys
  • Magnetic materials characterization
  • Growth of nanowires and creation of devices
    • Gallium-nitride and wide bandgap nanowires
    • Silicon and germanium nanowires
  • Measurements for evaluation of hydrogen in materials
  • Development of microscopy methods
  • Measurements of stress in thin films

News and Updates

Projects and Programs

Magnetic Nanoparticle Metrology

We are developing best practice metrology for characterization of magnetic nanoparticle systems (e.g. blocking temperature, anisotropy, property distributions

Electrochemical Processes

In this project we are developing in situ measurements relevant to the electrochemical fabrication, processing, and application of nanostructured materials and

Publications

Valley Phenomena in the Candidate Phase Change Material WSe2(1-x)Te2x

Author(s)
Sean M. Oliver, Joshua Young, Sergiy Krylyuk, Thomas L. Reinecke, Albert Davydov, Patrick M. Vora
Alloyed transition metals dichalcogenides (TMDs) provide the unique opportunity for coupling band engineering and valleytronic phenomena in an atomically-thin

Copper Nanocubes for CO2 Reduction in Gas Diffusion Electrodes

Author(s)
Yuxuan Wang, Hao Shen, Ken J. Livi, David M. Raciti, Han Zong, John Gregg, Mofopefoluwa Onadeko, Yidong Wang, Adam Watson, Chao Wang
Electroreduction of CO2 represents a promising solution for addressing the global challenges in energy and sustainability. The reaction is highly sensitive to

Simulation of Copper Electrodeposition in Through-Hole Vias

Author(s)
Trevor M. Braun, Daniel Josell, Thomas P. Moffat, Jimmy John
Copper electrodeposition processes for filling metallized through-hole (TH) and through-silicon vias (TSV) depend on selective breakdown of a co-adsorbed

Software

HolograFREE

An electron hologram is a fringe modulated image containing the amplitude and phase information of an electron transparent object. The HolograFREE routines