NanoFab Tool: Reactive Ion Etcher 790 Nitride Left
This PlasmaTherm 790 reactive ion etcher (RIE) is a parallel plate plasma etching system which uses fluorocarbon and oxygen gases to etch silicon nitride thin films. The large chamber can accommodate substrates ranging from 200 mm diameter wafers down to small pieces.
Radio frequency (RF) power source: up to 500 W at 13.56 MHz.
Unique process gases: trifluormethane (CHF3), tetrafluoromethane (CF4), sulfur hexafluoride (SF6), argon (Ar), and oxygen (O2).
Reactive ion etching of silicon nitride.
Supported Sample Sizes
Maximum wafer diameter: 200 mm (8 in).
Small pieces supported: Yes.