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NanoFab Tool: Reactive Ion Etcher 790 Nitride Left
This PlasmaTherm 790 reactive ion etcher (RIE) is a parallel plate plasma etching system which uses fluorocarbon and oxygen gases to etch silicon nitride thin films. The large chamber can accommodate substrates ranging from 200 mm diameter wafers down to small pieces.
Specifications/Capabilities
Radio frequency (RF) power source: up to 500 W at 13.56 MHz.
Unique process gases: trifluormethane (CHF3), tetrafluoromethane (CF4), sulfur hexafluoride (SF6), argon (Ar), and oxygen (O2).
Reactive ion etching of silicon nitride.
Usage Information
Supported Sample Sizes
Maximum wafer diameter: 200 mm (8 in).
Small pieces supported: Yes.
Typical Applications
- Anisotropic silicon nitride thin film etching.