NIST Measurement Science and Engineering Research Grants
NOVEL ELECTRICAL AND PHYSICAL CHARACTERIZATION OF THE SiC-SiO2 INTERFACE
Develop novel measurement techniques to study the interface between silicon carbide (SiC) and silicon dioxide (SiO2) in metal oxide semiconductor field-effect transistor (MOSFET) devices designed to handle large amounts of power for rapidly routing electrical energy to customers from diverse sources such as wind and solar powered devices.
RECIPIENT: General Electric, GE Global Research, Niskayuna, NY
- Project duration: 3 Years
- Total NIST Funding: $1,500,000
GE Global Research and The Pennsylvania State University will develop novel measurement techniques to study the SiC-SiO2 interface in silicon carbide power MOSFET devices. The team will develop measurement techniques based on pulsed gate Hall effect, electron spin resonance based, and synchrotron-based X-ray photoemission spectroscopy to characterize the electrical resistance of the SiC-SiO2 interface. Reducing the interfacial resistance is a critical technical requirement for enabling SiC MOSFET devices to provide a quantum leap in efficiency, operating frequency, and operating temperature for processing electrical energy. These improvements will enable a key component to efficiently process energy from diverse variable sources such as wind- and solar-powered devices and rapidly route it to customers.
Public contact (for project information):
Todd Alhart, 518-387-7914
Project Partners: The Pennsylvania State University
NIST Program Office Contact:
Jason Boehm, 301-975-8678