XAFS as a Direct Local Structural Probe in Revealing the Effects of a C Presence in B Diffusion in SiGe Layers

Published

October 12, 2021

Author(s)

M A. Sahiner, J. L. Sarrao, M S. Carroll, C W. Magee, S W. Novak, Joseph Woicik

Abstract

The local structural information around the germanium atom in boron doped SiGe alloys is important in understanding the dopant diffusion mechanisms. Epitaxial SiGe test structures with B and C markers were grown on Si substrates by using rapid thermal chemical vapor deposition (RTCVD). The local structure around the Ge atom was probed using Ge K-edge x-ray absorption fine structure spectroscopy (XAFS) to determine the effects of the B and C on the Ge sites. The concentration profiles obtained from secondary ion mass spectrocopy are correlated with the Ge XAFS results. The modifications on the local structure around the Ge atoms are revealed from the multiple scattering analyses on the Ge near-neighbors. First and second shell XAFS fits to the B doped SiGe samples indicate a direct evidence of the Ge trapping of the B atoms whereas the C is randomly distributed to the Si lattice sites.

Proceedings Title

Proceedings for the MRS Spring Meeting

Conference Dates

April 12-16, 2004

Conference Location

Undefined

Conference Title

Materials Research Society

Pub Type

Conferences

Keywords

fine structure spectroscopy, Ge, rapid thermal chemical vapor deposition, RTCVD, SiGe, x-ray absorption, XAFS

Citation

Sahiner, M. , Sarrao, J. , Carroll, M. , Magee, C. , Novak, S. and Woicik, J. (2021), XAFS as a Direct Local Structural Probe in Revealing the Effects of a C Presence in B Diffusion in SiGe Layers, Proceedings for the MRS Spring Meeting, Undefined (Accessed April 24, 2024)