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XAFS as a Direct Local Structural Probe in Revealing the Effects of a C Presence in B Diffusion in SiGe Layers

Published

Author(s)

M A. Sahiner, J. L. Sarrao, M S. Carroll, C W. Magee, S W. Novak, Joseph Woicik

Abstract

The local structural information around the germanium atom in boron doped SiGe alloys is important in understanding the dopant diffusion mechanisms. Epitaxial SiGe test structures with B and C markers were grown on Si substrates by using rapid thermal chemical vapor deposition (RTCVD). The local structure around the Ge atom was probed using Ge K-edge x-ray absorption fine structure spectroscopy (XAFS) to determine the effects of the B and C on the Ge sites. The concentration profiles obtained from secondary ion mass spectrocopy are correlated with the Ge XAFS results. The modifications on the local structure around the Ge atoms are revealed from the multiple scattering analyses on the Ge near-neighbors. First and second shell XAFS fits to the B doped SiGe samples indicate a direct evidence of the Ge trapping of the B atoms whereas the C is randomly distributed to the Si lattice sites.
Proceedings Title
Proceedings for the MRS Spring Meeting
Conference Dates
April 12-16, 2004
Conference Location
Undefined
Conference Title
Materials Research Society

Keywords

fine structure spectroscopy, Ge, rapid thermal chemical vapor deposition, RTCVD, SiGe, x-ray absorption, XAFS

Citation

Sahiner, M. , Sarrao, J. , Carroll, M. , Magee, C. , Novak, S. and Woicik, J. (2021), XAFS as a Direct Local Structural Probe in Revealing the Effects of a C Presence in B Diffusion in SiGe Layers, Proceedings for the MRS Spring Meeting, Undefined (Accessed June 25, 2024)

Issues

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Created October 12, 2021