X-ray Absorption Spectroscopy to Probe Surface Composition and Surface Deprotection in Photoresist Films

Published

March 1, 2005

Author(s)

Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Daniel A. Fischer, S Sambasivan, Eric K. Lin, Ronald L. Jones, Christopher Soles, Wen-Li Wu, D M. Goldfarb, M Angelopoulos

Abstract

We utilize near edge x-ray absorption fine structure spectroscopy (NEXAFS) to provide chemical insight into surface chemical effects in model photo-resist films. First, NEXAFS was used to examine the resist/air interface including surface segregration of a photo-acid generator (PAG) and the extent of surface de-protection in the film. The concentration of PAG as the resist -- air interface was higher than the bulk concentration, which led to a faster de-protection rate at that interface. Second, a NEXAFS technique was developed to depth profile for compositional gradients in resist films and line edge regions. In a model line edge region the extent of the surface deprotection at the developed line edge decreased with increasing post exposure bake time.

Citation

Langmuir

Volume

21 No. 9

Pub Type

Journals

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Keywords

NEXAFS, photoresists

Citation

Lenhart, J. , Fischer, D. , Sambasivan, S. , Lin, E. , Jones, R. , Soles, C. , Wu, W. , Goldfarb, D. and Angelopoulos, M. (2005), X-ray Absorption Spectroscopy to Probe Surface Composition and Surface Deprotection in Photoresist Films, Langmuir, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852399 (Accessed December 8, 2024)