UV Photoemission for Rare Gases Implanted in Ge

Published

August 21, 1978

Author(s)

B Waclawski, John William Gadzuk, J F. Herbst

Abstract

The first ultraviolet photoemission spectra of the valence electrons of rare-gas atoms, implanted by ion bombardment into an amorphous Ge matrix, are presented here. The positions of the peaks in the observed spectra are shifted relative to gas-phase spectra, consistent with a final-state screening-energy shift which varies inversely with the radius of the particular implant, as predicted by a linear-response relaxation model described herein.

Citation

Physical Review Letters

Volume

41

Issue

8

Pub Type

Journals

Citation

Waclawski, B. , Gadzuk, J. and Herbst, J. (1978), UV Photoemission for Rare Gases Implanted in Ge, Physical Review Letters (Accessed December 10, 2023)