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UV Photoemission for Rare Gases Implanted in Ge

Published

Author(s)

B Waclawski, John William Gadzuk, J F. Herbst

Abstract

The first ultraviolet photoemission spectra of the valence electrons of rare-gas atoms, implanted by ion bombardment into an amorphous Ge matrix, are presented here. The positions of the peaks in the observed spectra are shifted relative to gas-phase spectra, consistent with a final-state screening-energy shift which varies inversely with the radius of the particular implant, as predicted by a linear-response relaxation model described herein.
Citation
Physical Review Letters
Volume
41
Issue
8

Citation

Waclawski, B. , Gadzuk, J. and Herbst, J. (1978), UV Photoemission for Rare Gases Implanted in Ge, Physical Review Letters (Accessed May 25, 2024)

Issues

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Created August 20, 1978, Updated October 12, 2021