Waclawski, B.
, Gadzuk, J.
and Herbst, J.
(1978),
UV Photoemission for Rare Gases Implanted in Ge, Physical Review Letters
(Accessed February 8, 2026)
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UV Photoemission for Rare Gases Implanted in Ge
Published
Author(s)
B Waclawski, , J F. Herbst
Abstract
The first ultraviolet photoemission spectra of the valence electrons of rare-gas atoms, implanted by ion bombardment into an amorphous Ge matrix, are presented here. The positions of the peaks in the observed spectra are shifted relative to gas-phase spectra, consistent with a final-state screening-energy shift which varies inversely with the radius of the particular implant, as predicted by a linear-response relaxation model described herein.Citation
Physical Review Letters
Volume
41
Issue
8
Pub Type
Journals
Citation
Issues
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Created August 20, 1978, Updated October 12, 2021