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Ultra-Thin Film Dielectric Reliability Characterization

Published

Author(s)

John S. Suehle

Abstract

The reliability of gate oxides is becoming a critical concern as oxide thickness is scaled below 4 nm in future technology nodes. The breakdown detection algorithms in traditional reliability characterization techniques must be modified for very thin films that exhibit excessive tunneling currents and soft breakdown. It becomes essential to fully understand the physical mechanism(s) responsible for gate oxide wear-out and breakdown if reliability projections are based on the results of highly accelerated wafer-level GOI tests. Issues relating to the reliability testing of ultra-thin oxides are discussed with examples.
Proceedings Title
Proc., ASTM Conference on Gate Dielectric Integrity
Conference Dates
January 15-17, 1999
Conference Location
Paris, FR
Conference Title
ASTM Conference on Gate Dielectric Integrity

Keywords

accelerated stress tests, dielectric breakdown, gate oxide integrity, silicon dioxide

Citation

Suehle, J. (1999), Ultra-Thin Film Dielectric Reliability Characterization, Proc., ASTM Conference on Gate Dielectric Integrity, Paris, FR (Accessed June 15, 2024)

Issues

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Created January 15, 1999, Updated February 17, 2017