Ultra-Thin Film Dielectric Reliability Characterization
John S. Suehle
The reliability of gate oxides is becoming a critical concern as oxide thickness is scaled below 4 nm in future technology nodes. The breakdown detection algorithms in traditional reliability characterization techniques must be modified for very thin films that exhibit excessive tunneling currents and soft breakdown. It becomes essential to fully understand the physical mechanism(s) responsible for gate oxide wear-out and breakdown if reliability projections are based on the results of highly accelerated wafer-level GOI tests. Issues relating to the reliability testing of ultra-thin oxides are discussed with examples.
Proc., ASTM Conference on Gate Dielectric Integrity