NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.
Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.
An official website of the United States government
Here’s how you know
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Third order Intermodulation Distortion in Film Bulk Acoustic Resonators at Resonance and Antiresonance
Published
Author(s)
Eduard Rocas, Juan C. Collado Gomez, Jordi Mateu, Nathan D. Orloff, Alberto Padilla, Juan Callaghan, James C. Booth, Robert Aigner
Abstract
This paper presents recent measurements and modeling of the third order intermodulation products of a Film Bulk Acoustic Resonator (FBAR), for a various values of frequency spacing between driving tones. The frequency dependence of voltage and current in the acoustic branch rules out a voltage-dependent nonlinearity. The results show different slopes at resonance and antiresonance, which are correctly adjusted by the model with a current dependent inductor and/or capacitor. The intermodulation distortion is found to be dependent on the frequency spacing between driving tones, indicating memory effects.
Citation
IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control
Rocas, E.
, Collado, J.
, Mateu, J.
, Orloff, N.
, Padilla, A.
, Callaghan, J.
, Booth, J.
and Aigner, R.
(2008),
Third order Intermodulation Distortion in Film Bulk Acoustic Resonators at Resonance and Antiresonance, IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control, [online], https://doi.org/10.1109/MWSYM.2008.4633288
(Accessed October 17, 2025)