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Third order Intermodulation Distortion in Film Bulk Acoustic Resonators at Resonance and Antiresonance

Published

Author(s)

Eduard Rocas, Juan C. Collado Gomez, Jordi Mateu, Nathan D. Orloff, Alberto Padilla, Juan Callaghan, James C. Booth, Robert Aigner

Abstract

This paper presents recent measurements and modeling of the third order intermodulation products of a Film Bulk Acoustic Resonator (FBAR), for a various values of frequency spacing between driving tones. The frequency dependence of voltage and current in the acoustic branch rules out a voltage-dependent nonlinearity. The results show different slopes at resonance and antiresonance, which are correctly adjusted by the model with a current dependent inductor and/or capacitor. The intermodulation distortion is found to be dependent on the frequency spacing between driving tones, indicating memory effects.
Citation
IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control

Keywords

Thin-film bulk acoustic wave resonators, intermodulation, nonlinear characterization, resonance, antiresonance.

Citation

Rocas, E. , Collado, J. , Mateu, J. , Orloff, N. , Padilla, A. , Callaghan, J. , Booth, J. and Aigner, R. (2008), Third order Intermodulation Distortion in Film Bulk Acoustic Resonators at Resonance and Antiresonance, IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control, [online], https://doi.org/10.1109/MWSYM.2008.4633288 (Accessed April 21, 2024)
Created June 15, 2008, Updated January 27, 2020