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Thermally Induced Stress Relaxation and Densification of Spin-on-Glass Thin Films

Published

Author(s)

C. K. Chiang, William E. Wallace, G W. Lynn, D Feiler, W. Xia

Abstract

The stress-temperature relationship of silica spin-on-glass thin films on silicon wafers was studied. Upon heating the stress-temperature curves showed a dramatically increasing slope when the temperature of the film was greater than 340 C. At 450 C, a significant, irreversible change in the stress of the film was observed. This change in stress was correlated with an increase in film electron density and a decrease in film thickness. This observed thermally activated stress-relaxation behavior was interpreted in terms of reflow of the glassy hydrogen-silsequioxane-based material.
Citation
Applied Physics Letters
Volume
76
Issue
No. 4

Keywords

hydrogen-silsesquioxane, low-K dielectric, spin-on-glass, stress, thin-film

Citation

Chiang, C. , Wallace, W. , Lynn, G. , Feiler, D. and Xia, W. (2000), Thermally Induced Stress Relaxation and Densification of Spin-on-Glass Thin Films, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=851605 (Accessed April 18, 2024)
Created December 31, 1999, Updated October 12, 2021