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Theory of Ballistic Electron Emission Microscopy Spectroscopy of NiSi2/Si(111) Interfaces
Published
Author(s)
Mark D. Stiles, D Hamann
Abstract
We discuss theoretical calculations of ballistic-electron- emission-microscopy spectra based in part on a first-principles computation of the transmission across the interfaces. We propose a way of presenting experimental data that highlights the transmission process with respect to contributions from the tunneling distribution. We present a specific application to A- and B-type NiSi2/Si(111) interfaces showing a factor three difference between them at low voltages
Stiles, M.
and Hamann, D.
(1991),
Theory of Ballistic Electron Emission Microscopy Spectroscopy of NiSi<sub>2</sub>/Si(111) Interfaces, Physical Review Letters
(Accessed October 21, 2025)