Theory of Ballistic Electron Emission Microscopy Spectroscopy of NiSi2/Si(111) Interfaces

Mark Stiles; D Hamann

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PUBLICATIONS

Theory of Ballistic Electron Emission Microscopy Spectroscopy of NiSi₂/Si(111) Interfaces

Published

January 1, 1991

Author(s)

Mark Stiles, D Hamann

Abstract

We discuss theoretical calculations of ballistic-electron- emission-microscopy spectra based in part on a first-principles computation of the transmission across the interfaces. We propose a way of presenting experimental data that highlights the transmission process with respect to contributions from the tunneling distribution. We present a specific application to A- and B-type NiSi₂/Si(111) interfaces showing a factor three difference between them at low voltages

Citation

Physical Review Letters

Volume

Issue

Pub Type

Journals

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Local Download

Nanoelectronics

Citation

Stiles, M. and Hamann, D. (1991), Theory of Ballistic Electron Emission Microscopy Spectroscopy of NiSi<sub>2</sub>/Si(111) Interfaces, Physical Review Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=620390 (Accessed April 25, 2026)

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Created January 1, 1991, Updated April 21, 2026

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