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Theory of Ballistic Electron Emission Microscopy Spectroscopy of NiSi2/Si(111) Interfaces

Published

Author(s)

Mark D. Stiles, D Hamann

Abstract

We discuss theoretical calculations of ballistic-electron- emission-microscopy spectra based in part on a first-principles computation of the transmission across the interfaces. We propose a way of presenting experimental data that highlights the transmission process with respect to contributions from the tunneling distribution. We present a specific application to A- and B-type NiSi2/Si(111) interfaces showing a factor three difference between them at low voltages
Citation
Physical Review Letters
Volume
66
Issue
24

Citation

Stiles, M. and Hamann, D. (1991), Theory of Ballistic Electron Emission Microscopy Spectroscopy of NiSi<sub>2</sub>/Si(111) Interfaces, Physical Review Letters (Accessed July 14, 2024)

Issues

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Created December 31, 1990, Updated October 12, 2021