Materer, N.
, Goodman, R.
and Leone, S.
(2000),
Temperature dependence of neutral and positively charged Si and SiCl etch products during argon-ion-enhanced etching of Si(100) by Cl<sub>2</sub>, Journal of Vacuum Science and Technology
(Accessed December 3, 2024)
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Temperature dependence of neutral and positively charged Si and SiCl etch products during argon-ion-enhanced etching of Si(100) by Cl2
Published
Author(s)
N Materer, R S. Goodman,
Citation
Journal of Vacuum Science and Technology
Volume
18
Pub Type
Journals
Citation
Issues
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Created December 31, 1999, Updated October 12, 2021