Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Temperature dependence of neutral and positively charged Si and SiCl etch products during argon-ion-enhanced etching of Si(100) by Cl2

Published

Author(s)

N Materer, R S. Goodman, S R. Leone
Citation
Journal of Vacuum Science and Technology
Volume
18

Citation

Materer, N. , Goodman, R. and Leone, S. (2000), Temperature dependence of neutral and positively charged Si and SiCl etch products during argon-ion-enhanced etching of Si(100) by Cl<sub>2</sub>, Journal of Vacuum Science and Technology (Accessed April 12, 2024)
Created December 31, 1999, Updated October 12, 2021