TY  - JOUR
AU  - N Materer
AU  - R Goodman
AU  - S Leone
C2  - Journal of Vacuum Science and Technology
DA  - 2000-01-01 00:01:00
LA  - en
M1  - 18
PB  - Journal of Vacuum Science and Technology
PY  - 2000
TI  - Temperature dependence of neutral and positively charged Si and SiCl etch products during argon-ion-enhanced etching of Si(100) by Cl<sub>2</sub>
ER  -