Structure and Property Characterization of Porous Low-k Dielectric Constant Thin Films Using X-ray Reflectivity and Small Angle Neutron Scattering

Published

February 1, 2001

Author(s)

Eric K. Lin, Wen-Li Wu, C Jin, J T. Wetzel

Abstract

A novel methodology using a combination of high energy ion scattering, x-ray reflectivity, and small angle neutron scattering is developed to characterize the structure and properties of porous thin films for use as low-k dielectric materials. Ion scattering is used to determine the elemental composition of the film. X-ray reflectivity is used to measure the average electron density, film thickness, and electron density depth profile. Small angle neutron scattering is used to determine the pore structure and pore connectivity. Combining information from all three techniques, the film porosity and matrix material density can be uniquely determined.

Proceedings Title

| | AIP Conference Proceedings #550 Characterization and Metrology for ULSI Technology 2000: International Conference | AIP

Volume

550

Conference Dates

June 26-29, 2000

Conference Location

San Francisco, CA

Conference Title

AIP Conference Proceedings

Pub Type

Conferences

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Keywords

ion scattering spectroscopy, low-k dielectric material, porosity, porous thin film, small-angle neutron scattering, x-ray reflectivity

Citation

Lin, E. , Wu, W. , Jin, C. and Wetzel, J. (2001), Structure and Property Characterization of Porous Low-k Dielectric Constant Thin Films Using X-ray Reflectivity and Small Angle Neutron Scattering, | | AIP Conference Proceedings #550 Characterization and Metrology for ULSI Technology 2000: International Conference | AIP, San Francisco, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=851750 (Accessed May 18, 2024)