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Structure and Property Characterization of Porous Low-k Dielectric Constant Thin Films Using X-ray Reflectivity and Small Angle Neutron Scattering

Published

Author(s)

Eric K. Lin, Wen-Li Wu, C Jin, J T. Wetzel

Abstract

A novel methodology using a combination of high energy ion scattering, x-ray reflectivity, and small angle neutron scattering is developed to characterize the structure and properties of porous thin films for use as low-k dielectric materials. Ion scattering is used to determine the elemental composition of the film. X-ray reflectivity is used to measure the average electron density, film thickness, and electron density depth profile. Small angle neutron scattering is used to determine the pore structure and pore connectivity. Combining information from all three techniques, the film porosity and matrix material density can be uniquely determined.
Proceedings Title
| | AIP Conference Proceedings #550 Characterization and Metrology for ULSI Technology 2000: International Conference | AIP
Volume
550
Conference Dates
June 26-29, 2000
Conference Location
San Francisco, CA
Conference Title
AIP Conference Proceedings

Keywords

ion scattering spectroscopy, low-k dielectric material, porosity, porous thin film, small-angle neutron scattering, x-ray reflectivity

Citation

Lin, E. , Wu, W. , Jin, C. and Wetzel, J. (2001), Structure and Property Characterization of Porous Low-k Dielectric Constant Thin Films Using X-ray Reflectivity and Small Angle Neutron Scattering, | | AIP Conference Proceedings #550 Characterization and Metrology for ULSI Technology 2000: International Conference | AIP, San Francisco, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=851750 (Accessed April 23, 2024)
Created February 1, 2001, Updated February 17, 2017