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Small Angle X-Ray Scattering Measurements of Lithographic Patterns With Sidewall Roughness From Vertical Standing Waves

Published

Author(s)

Chengqing C. Wang, Ronald L. Jones, Eric K. Lin, Wen-Li Wu, Jim Leu

Abstract

Characterization of standing wave induced roughness is demonstrated using small angle x-ray scattering (SAXS). This roughness originates from the interference of the incident and reflected light beams during photoresist imaging, and is an important barrier to the application of photoresists in the fabrication of sub-100 nm features. The technique is shown to provide the roughness wavelength and amplitude, as well as providing a measure of the photoresist refractive index.
Citation
Applied Physics Letters

Keywords

critical dimension metrology, microelectronics, nanofabrication, nanotechnology, polymer coatings, sidewall roughness, small angle x-ray scattering, thin films

Citation

Wang, C. , Jones, R. , Lin, E. , Wu, W. and Leu, J. (2007), Small Angle X-Ray Scattering Measurements of Lithographic Patterns With Sidewall Roughness From Vertical Standing Waves, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852615 (Accessed April 22, 2024)
Created May 10, 2007, Updated February 19, 2017